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Silver Metallization: Stability and Reliability (Engineering by Daniel Adams

By Daniel Adams

Silver has the bottom resistivity of all metals, which makes it an enticing interconnect fabric for larger present densities and quicker switching speeds in built-in circuits. over the last ten years, huge learn has been performed to deal with the thermal and electric balance, in addition to processing concerns which, to this point, have avoided the implementation of silver as an interconnect steel. Silver Metallization: balance and Reliability is the 1st publication to debate present wisdom of silver metallization and its capability as a positive candidate for implementation as a destiny interconnect fabric for built-in circuit know-how. Silver Metallization: balance and Reliability presents special details on quite a lot of experimental, characterization and research suggestions. It additionally provides the radical methods used to beat the thermal and electric balance concerns linked to silver metallization. Readers will find out about the: coaching and characterization of elemental silver skinny motion pictures and silver-metal alloys; formation of diffusion obstacles and adhesion promoters; evaluate of the thermal balance of silver lower than diverse annealing stipulations; assessment of houses of silver skinny motion pictures less than quite a few processing stipulations; tools of dry etching of silver traces and the combination of silver with low-k dielectric fabrics. As a worthy source during this rising box; Silver Metallization: balance and Reliability can be very invaluable to scholars, scientists, engineers and technologists within the fields of built-in circuits and microelectronics examine and improvement.

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It is suggested that the crystallization of films is enhanced and grain size is increased when Ag(Al) thin film is annealed. For pure Ag thin films, it is found that agglomeration begins from the sample annealed at 400°C in vacuum for 1 hour although the fraction of voids is small. The Ag thin film annealed at 600°C for 1 hour in vacuum, agglomerates completely resulting in Ag islands. However, Ag(Al) thin films do not have any surface changes in morphology at various anneal temperatures. 3. For as-deposited thin films, the resistivity of pure Ag thin film is the lowest.

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