By Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto
In fabrication of FeRAMs, numerous educational and technological backgrounds are beneficial, which come with ferroelectric fabrics, skinny movie formation, equipment physics, circuit layout, and so on.This publication covers from basics to purposes of ferroelectric random entry stories (FeRAMs). The publication includes five components; (1) ferroelectric skinny movies, (2) deposition and characterization tools, (3) fabrication strategy and circuit layout, (4) advanced-type thoughts, and (5) functions and destiny clients, and every half is extra devided in numerous chapters. as a result of the wide variety of the mentioned subject matters, each one bankruptcy during this booklet was once written via the best authors figuring out the explicit subject rather well. hence, this can be a stable advent booklet of FeRAM for graduate scholars and new comers to this box, in addition to it is helping experts to appreciate FeRAMs extra deeply.
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Extra resources for Ferroelectric Random Access Memories Fundamentals and Applications Topics in Applied Physics
Example text
E. Steinhauer, S. Aggarwall, E. Williams, R. Ramesh: Appl. Phys. Lett. 77, 292 (2000) 34 C. S. Ganpule, V. Nagarajan, B. K. Hill, A. L. Roytburd, E. D. Williams, R. Ramesh, S. P. Alpay, A. Roelofs, R. Waser, L. M. Eng: J. Appl. Phys. 91, 1477 (2002) 34 M. E. Lines, A. M. Glass: Principles and Applications of Ferroelectrics and Related Materials (Clarendon, Oxford 1977) 35 S. Chikazumi, S. H. Charap: Physics of Magnetism (Wiley, New York 1964) 35 D. Damjanovic, M. Demartin: J. Phys. Condens. Matter 9, 4943 (1997) 35 D.
However, the exact interplay among this fundamental process, domain walls, defects, and the overall appearance of the ferroelectric hysteresis is still not precisely known. The separation of the total polarization into reversible and irreversible contributions that has long been appreciated in the study of ferromagnetic materials [13] might facilitate the understanding of ferroelectric polarization mechanisms. In particular, the irreversible processes would be important for ferroelectric memory devices, since the reversible processes cannot be used to store information.
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