By Jean-Pierre Colinge (auth.)
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Extra info for Silicon-on-Insulator Technology: Materials to VLSI
Example text
Another type of "defect" conductivity can be attributed to silicon filaments which do not extend all the way from the silicon wafer up to the silicon overlayer. These defect give rise to a very low current, until the applied voltage reaches several volts. 12). 1 ducuon 10 100 Applied voltage (V) 2 7 12: "Defect" current density in the BOX as a function of the applied (ramped) voltage =400 nm). A: Current due to silicon pipes; B: Field-emission current. 2, as well as these which appear to be within reach in a near future.
These processes allow small amounts of nitrogen to diffuse towards the Si-Si02 interface during ZMR processing, which drastically improves wetting and, therefore, the quality of recrystallization. 4 3. Mass tran;iport The thickness uniformity of an SOl layer is of crucial importance, especially for thinfilm applications. lndeed, some thin SOl MOSFET parameters such as threshold voltage and subthreshold slope are extremely sensitive to film thickness variations. SOl films produced by the ZMR technique exhibit two types of thickness non-uniformity.
The impurity found in highest concentration in the recrystallized silicon film is oxygen. 5x1Q18 atoms/cm3 (oxygen solubility in liquid silicon). :! § 18 ·~ c g " 0 u 17 c ~ »>( 0 .... J 16 5 25 10 Depth (~ m) Fjgure 2 4 9: Oxygen concentration as a function of depth in I, 5, I 0, and 25 silicon films. 26 ~m-thick ZMR The segregation coefficient for oxygen at the solidification interface being close to 1, a similar concentration is found in the silicon film right after solidification. During cooling down after ZMR processing, however, the oxygen dissolved in the silicon film segregates towards the upper and lower Si-SiOz interfaces, which decreases the oxygen concentration in the silicon film.
