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Advanced Dielectric, Piezoelectric and Ferroelectric Thin by Bruce A. Tuttle, Chonglin Chen, Quanxi Jia, R. Ramesh

By Bruce A. Tuttle, Chonglin Chen, Quanxi Jia, R. Ramesh

Advances in synthesis and characterization of dielectric, piezoelectric and ferroelectric skinny motion pictures are incorporated during this quantity. Dielectric, piezoelectric and ferroelectric skinny motion pictures have a major effect on quite a few advertisement and army structures together with tunable microwave units, stories, MEMS units, actuators and sensors. contemporary paintings on piezoelectric characterization, AFE to FE dielectric part transformation dielectrics, answer and vapor deposited skinny movies, and fabrics integration are one of the subject matters incorporated. Novel ways to nanostructuring, characterization of fabric homes and actual responses on the nanoscale is also included.Content:

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Additional resources for Advanced Dielectric, Piezoelectric and Ferroelectric Thin Films, Volume 162

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On the other hand, the physical properties of PSTO are highly dependent upon the composition ratio between the Pb and Sr in the compound. 8,9 Furthermore, it should be noted that decreasing the giant splitting of longitudinal and transverse optical phonons in ferroelectric PSTO suggests that this compound might prevail over the soft mode in the BSTO system. 10'1112 This can be further manifested from the fact that the Pb-0 interaction is more hybridized than the Ba-0 interaction resulting in decreasing longitudinal-transverse splitting phenomena in the PSTO system rather than increasing splitting observed in BSTO.

Soc. Symp. Proc. 474, (1997)]; Ferroelectric Thin Films II, edited by A. I. Kingon, E. R. Myers, and B. A. Tuttle [Mater. Res. Soc. Symp. Proc. 243, (1991)]. 48 • Advanced Dielectric, Piezoelectric and Ferroelectric Thin Films 2 C. L. Chen, H. H. Feng, Z. Zhang, A. Brazdeikis, Z. J. Huang, W. K. Chu, C. W. Chu, F. A. Miranda, F. W. Van Keuls, R. R. Romanofsky, and Y. Liou, Appl. Phys. Lett. 75, 412 (1999); i. , 78 (2001) 652. 3 K. R. Carroll, J. M. Pond, D. B. Chrisey, J. S. Horwitz, and R. E. Leuchtner, Appl.

2 years at 125°C showing good reliability for BST thin film capacitors deposited by sputtering. io 12 ! 2 Yrs> I 1(fl S 101 10° 101 ltf lrf time (s) 104 Fig. 5. Current time characteristics of Pt/BST/Pt thin film capacitors. 4 1000/T (1/K) Fig. 6. MTTF vs. 1/T for Pt/BST/Pt thin film capacitors. As shown in Fig. 29eV. '"A is similar to the enthalpy of migration for oxygen vacancies in SrTiC>3 thin films [8] suggesting that the degradation in leakage properties may be mediated by the drift of positively charged oxygen vacancies to the cathode under the action of the applied bias.

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