By Norman G. Einspruch, Robert S. Bauer
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Additional resources for VLSI electronics, microstructure science. 10, Surface and interface effects in VLSI
Example text
Correlation with centers in damaged Si suggest that this state (P^) is trivalent Si, that is, Si bonded to three Si atoms with a fourth dangling bond. The orientation dependence of this center on (111), (110), and (100) wafers reveals only simply oriented dangling bonds consistent with an abrupt interface model. The density of centers is strongly correlated with midgap Qit states as observed from growth and annealing experiments. On (100) an additional interfacial center (Pbl) with similar orientational behavior is observed and has been assigned to a dangling bond on a Si atom bound to two Si atoms and one O atom.
16. Normalized Gp/co curves obtained at various temperatures by the conductance technique. (From Deuling et al. ) 53 2. Characterization of the Si-Si0 2 Interface 3. Transient Spectroscopy Deep-level transient spectroscopy [118,119,121] (DLTS) is also useful to determine interface traps in MOS capacitors and MOSFETs [ 120,122]. The measurement principle is illustrated in Fig. 17. Interface states are filled by biasing the semiconductor surface into accumulation. The spectrum of emission time constants is analyzed in depletion.
A complex deconvolution scheme was employed to remove intrinsic and instrumental broadening from the profiles of electron emission energy. The deconvoluted profiles reveal the distribution of Si-O binding energies in the interfacial region. Depth deconvolution was also required as the inherent resolution of XPS is somewhat inferior to AES owing to the higher energy of emitted electrons. A theoretical analysis by Nucho and Madhukar [86] permits a correlation of the various energy peaks with charge transfer from Si to O in the bridging O - Si - O bonds as a function of the bonding angle.
