By Bau R. (ed.)
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E. Steinhauer, S. Aggarwall, E. Williams, R. Ramesh: Appl. Phys. Lett. 77, 292 (2000) 34 C. S. Ganpule, V. Nagarajan, B. K. Hill, A. L. Roytburd, E. D. Williams, R. Ramesh, S. P. Alpay, A. Roelofs, R. Waser, L. M. Eng: J. Appl. Phys. 91, 1477 (2002) 34 M. E. Lines, A. M. Glass: Principles and Applications of Ferroelectrics and Related Materials (Clarendon, Oxford 1977) 35 S. Chikazumi, S. H. Charap: Physics of Magnetism (Wiley, New York 1964) 35 D. Damjanovic, M. Demartin: J. Phys. Condens. Matter 9, 4943 (1997) 35 D.
However, the exact interplay among this fundamental process, domain walls, defects, and the overall appearance of the ferroelectric hysteresis is still not precisely known. The separation of the total polarization into reversible and irreversible contributions that has long been appreciated in the study of ferromagnetic materials [13] might facilitate the understanding of ferroelectric polarization mechanisms. In particular, the irreversible processes would be important for ferroelectric memory devices, since the reversible processes cannot be used to store information.
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