By Yue Fu, Zhanming Li, Wai Tung Ng, Johnny K.O. Sin
''From energy electronics to strength built-in circuits (PICs), clever strength applied sciences, units, and past, built-in energy units and TCAD Simulation presents an entire photograph of the ability administration and semiconductor undefined. an important reference for energy equipment engineering scholars and execs, the booklet not just describes the physics within built-in energy semiconductor units such lateral double-diffused steel oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and tremendous junction LDMOSFETs but in addition provides an easy creation to strength administration structures. rather than summary theoretical remedies and daunting equations, the textual content makes use of know-how computer-aided layout (TCAD) simulation examples to provide an explanation for the layout of built-in energy semiconductor units. It additionally explores subsequent iteration strength units similar to gallium nitride energy excessive electron mobility transistors (GaN energy HEMTs).Including a digital technique circulate for shrewdpermanent PIC know-how in addition to a hard-to-find know-how improvement association chart, built-in strength units and TCAD Simulation provides scholars and junior engineers a head commence within the box of energy semiconductor units whereas supporting to fill the distance among energy gadget engineering and tool administration structures. ''-- Read more...
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Extra resources for Integrated Power Devices and TCAD Simulation
29 Simulation result of a boost DC/DC converter. 34) 25 Power Electronics, the Enabling Green Technology With input voltage of 12 V, the output voltage is found to be 24 V at steady state. The fluctuation of output voltage at the beginning reflects the time needed to establish steady state. The main focus on this book is on the design and operation of the power devices using TCAD simulation tools. SPICE circuit simulations represent the next design step in the development process. This topic is widely covered by numerous books and will not be repeated here.
The PWM waveform is then generated via the DPWM module. After the appropriate dead times are incorporated, the gate drive signals are sent to the power transistors via the gate driver. If PFM (pulse frequency modulation) operation is desired, a mode selector can be used to choose PWM or PFM. The major difference is the segmented output stage. In this design, the sizes of the power transistors (both high side and low side) are actually the same as in a conventional design with the same output current rating.
The major difference is the segmented output stage. In this design, the sizes of the power transistors (both high side and low side) are actually the same as in a conventional design with the same output current rating. The only difference is in terms of organization. In this case, the HS and LS power transistors are organized into seven equal segments and basically occupy the same area as one big transistor. The segments are connected in binary weighted 1, 2, and 4 segments such that a three-bit control signal can activate seven different transistor sizes (from size 1 to 7).